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NTMFS4823N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? Ambient – Steady State (Note 1)
Junction ? to ? Ambient – Steady State (Note 2)
Junction ? to ? Ambient ? t v 10 sec
Symbol
R q JC
R q JA
R q JA
R q JA
Value
3.8
59.4
146
23
Unit
° C/W
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
V GS = 0 V, I D = 250 m A
30
24
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
1.5
1.9
2.5
V
Negative Threshold Temperature Coefficient
V GS(TH) /T J
5.1
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V to
11.5 V
V GS = 4.5 V
I D = 30 A
I D = 15 A
I D = 30 A
9.2
9.1
15.6
10.6
18.0
m W
I D = 15 A
15.1
Forward Transconductance
g FS
V DS = 1.5 V, I D = 15 A
26
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
795
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1 MHz, V DS = 15 V
V GS = 4.5 V, V DS = 15 V; I D = 30 A
V GS = 11.5 V, V DS = 15 V,
I D = 30 A
163
85
6.0
1.0
2.6
2.5
13
11
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
10.8
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
29
12.7
3.8
ns
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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